Maximus Flash Reliability

15nm MLC NAND Flash Reliability Note

Write/Erase Endurance

Write/Erase endurance failures may occur in a cell, page, or block, and are detected by doing a status read after either an auto program or auto block erase operation. The cumulative bad block count will increase along with the number of write/erase cycles.

         Write/Erase Cycles (Cycles) 6000

      Cumulative Block Failure Rate Less Than 0.04

Data Retention

The data in memory may change after a certain amount of storage time. This is due to charge loss or charge gain. After block erase and reprogramming, the block may become usable again.